High frequency switch module and multi-layer substrate for high frequency switch module
US7206551B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2004 |
| Grant date | Apr 17, 2007 |
| Priority date | — |
| Expiry date | Oct 13, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P1/15
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A high frequency switch module comprises an antenna port, a plurality of transmission signal ports, a plurality of reception signal ports, a high frequency switch, a plurality of LPFs and a plurality of phase adjusting lines. The high frequency switch allows one signal port among the transmission signal ports and the reception signal ports to be selectively connected to the antenna port. The high frequency switch includes a field-effect transistor made of a GaAs compound semiconductor. Each of the phase adjusting lines connects the high frequency switch to each of the LPFs. Each of the phase adjusting lines adjusts a phase difference between a progressive wave of a harmonic resulting from a transmission signal and produced at the high frequency switch and a reflected wave resulting from reflection of the progressive wave from each of the LPFs such that the power of a composite wave made up of the progressive wave and the reflected wave is made lower at the point of the high frequency switch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.