Methods of bridging lateral nanowires and device using same
US7208094B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2003 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Jul 11, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/742
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor nanowire is grown laterally. A method of growing the nanowire forms a vertical surface on a substrate, and activates the vertical surface with a nanoparticle catalyst. A method of laterally bridging the nanowire grows the nanowire from the activated vertical surface to connect to an opposite vertical surface on the substrate. A method of connecting electrodes of a semiconductor device grows the nanowire from an activated device electrode to an opposing device electrode. A method of bridging semiconductor nanowires grows nanowires between an electrode pair in opposing lateral directions. A method of self-assembling the nanowire bridges the nanowire between an activated electrode pair. A method of controlling nanowire growth forms a surface irregularity in the vertical surface. An electronic device includes a laterally grown nano-scale interconnection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.