Method for forming transparent thin film, transparent thin film formed by the method, and transparent substrate with transparent thin film
US7208235B2 · kind B2 · utility
7Cited by
9References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 31, 2003 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Jul 4, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
The present invention provides a method for forming a transparent thin film by a chemical vapor deposition method using a gaseous raw material. In the method, a film growth rate is at least 8 nm/s, and the transparent thin film contains at least one selected from carbon (C) and oxygen (O), nitrogen (N), hydrogen (H), and silicon (Si). According to this method, a transparent thin film that does not peel off a substrate easily due to the eased tension in the thin film and has high transmittance in the visible light region can be deposited on a glass ribbon in a float bath.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.