Method for varying the uniformity of a dopant as it is placed in a substrate by varying the speed of the implant across the substrate
US7208330B2 · kind B2 · utility
3Cited by
14References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2005 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Jan 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28035
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for placing a dopant in a substrate and a method for manufacturing an integrated circuit. The method for placing a dopant in a substrate, among other steps, includes providing a substrate (340) and implanting a dopant within the substrate (340) using an implant (370), the implant (370) moving at varying speeds across the substrate (340) to provide different concentrations of the dopant within the substrate (340).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.