Method of manufacturing semiconductor device, acid etching resistance material and copolymer
US7208334B2 · kind B2 · utility
12Cited by
10References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2005 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Apr 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is an acid etching resistance material comprising a compound having a repeating unit represented by the following general formula (1):
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.