Transistor with notched gate
US7208399B2 · kind B2 · utility
3Cited by
11References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2004 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Jul 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor having a gate electrode with a T-shaped cross section is fabricated from a single layer of conductive material using an etching process. A two process etch is performed to form side walls having a notched profile. The notches allow source and drain regions to be implanted in a substrate and thermally processed without creating excessive overlap capacitance with the gate electrode. The reduction of overlap capacitance increases the operating performance of the transistor, including drive current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.