Semiconductor device and a process for manufacturing a complex oxide film
US7208787B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 13, 2002 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Dec 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/667
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is prepared using an insulating film consisting of a tantalum-tungsten oxide crystal film, a tantalum-molybdenum oxide crystal film, or a laminated film where a silicon oxide, silicon oxynitride or silicon nitride film is laminated on the crystal film. The tantalum-tungsten oxide film is deposited on a substrate under an atmosphere of a mixture of the first material gas comprising tantalum, the second material gas comprising tungsten and an oxidizing agent. For improving a dielectric constant of the tantalum-tungsten or tantalum-molybdenum oxide crystal film, on a Ru substrate with (001) orientation is deposited a oxide crystal film, which is then heated in N2O plasma and subject to rapid thermal nitriding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.