Method of forming a raised source/drain and a semiconductor device employing the same
US7208803B2 · kind B2 · utility
11Cited by
14References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 5, 2004 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Dec 13, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/90
Abstract
A method of forming a raised source/drain proximate a spacer of a gate of a transistor on a substrate, and a semiconductor device of an integrated circuit employing the same. In one embodiment, the method includes orienting the gate substantially along a <100> direction of the substrate. The method also includes providing a semiconductor material adjacent the spacer of the gate to form a raised source/drain layer of the raised source/drain oriented substantially along a <100> direction of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.