Integrated MIS photosensitive device using continuous films
US7208810B2 · kind B2 · utility
9Cited by
9References
52Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 1, 2004 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Jul 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/2823
Abstract
An integrated photosensitive device with a metal-insulator-semiconductor (MIS) photodiode constructed with one or more substantially continuous layers of semiconductor material and with a substantially continuous layer of dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.