Semiconductor component

US7208829B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Henning M. Hauenstein · Redondo Beach, US
• Rainer Topp · Reutlingen, DE
• Jochen Seibold · Tübingen, DE
• Dirk Balszunat · Stuttgart, DE
• Stefan Ernst · Esslingen am Neckar, DE
• Wolfgang Feiler · Reutlingen, DE
• Thomas Koester · Reutlingen, DE
• Stefan Hornung · Echterdingen, DE
• Dieter Streb · Reutlingen, DE

Key dates

• Filing date: Feb 10, 2003
• Grant date: Apr 24, 2007
• Expiry date: Feb 10, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor component that is able to be produced simply, quickly, and yet reliably and that usable for power applications, and including a semiconductor chip, a lower, first main electrode layer formed on a first side of the semiconductor chip, a lower control electrode layer formed on the first side, an insulation layer formed on the first side between the lower first main electrode layer and the lower control electrode layer and which partly covers the lower first main electrode layer, an upper first main electrode layer which is formed on the lower first main electrode layer, an upper control electrode layer which is formed on the lower control electrode layer and the insulation layer and extends on the insulation layer partially above the lower first main electrode layer, and a second main electrode layer formed on a second side of the semiconductor chip.