Magnetic memory device and method of reading the same
US7209380B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2004 |
| Grant date | Apr 24, 2007 |
| Priority date | — |
| Expiry date | Mar 25, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/20
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention provides a magnetic memory device capable of performing reading operation with lower power consumption and at high read precision and a method of reading the magnetic memory device. Sense bit lines (21A, 21B) are provided in a bit line direction for each pair of magnetoresistive devices (12A, 12B) constructing a storage cell (12) and a read current is supplied. The read currents passed through the pair of magnetoresistive devices (12A, 12B) flow to the ground via a sense word line (31). Further, by providing a constant current circuit (108B) commonly for plural sense word lines (31), the sum of a pair of read currents passing through the pair of magnetoresistive devices (12A, 12B) in one storage cell constant, and information is read from the storage cell (12) on the basis of the difference between the pair of read currents. By sharing the constant current circuit (108B), variations in the sum of the pair of read currents can be reduced, and power consumption can be also reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.