Method for providing a liftoff process using a single layer resist and chemical mechanical polishing and sensor formed therewith
US7211195B2 · kind B2 · utility
9Cited by
4References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2003 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Nov 5, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3906
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for providing a liftoff process using a single layer resist and chemical mechanical polishing and sensor formed therewith are disclosed. Chemical mechanical polishing is combined with liftoff using only a single resist layer to allow the removal of leftover fencing on the side of a lifted resist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.