Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate
US7211454B2 · kind B2 · utility
9Cited by
21References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2004 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Apr 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/12
Abstract
The present invention provides an active matrix substrate which can be fabricated at a lower cost and a light emitting device having a large display area fabricated by a vapor deposition system which makes a film with uniform thickness for a large substrate. According to the invention, an organic light-emitting device can be fabricated by performing vapor deposition toward a large substrate provided with a pixel portion (and a driver circuit) including an n-channel TFT having a amorphous silicon film, semi-amorphous semiconductor film or an organic semiconductor film as an active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.