Capping layer for crystallizing germanium, and substrate having thin crystallized germanium layer
US7211521B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 21, 2004 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Oct 21, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A structure including at least one layer of germanium formed on a surface of a ceramic substrate is provided. The layer of germanium has a thickness of not larger than 10 microns and includes grains having grain size of at least 0.05 mm. A structure including at least one layer of germanium formed on a surface of a ceramic substrate and having at least one capping layer formed on a surface of the layer of germanium is also provided. In addition, a method of forming a thin film germanium structure is provided including forming at least one layer of germanium on a surface of a ceramic substrate, then forming at least one capping layer on a surface of the layer of germanium, followed by heating and then cooling the layer of germanium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.