Exhaust processing method, plasma processing method and plasma processing apparatus
US7211708B2 · kind B2 · utility
1Cited by
26References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 2, 2001 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Nov 23, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical-reaction inducing means is provided in an exhaust line connecting a processing space for subjecting a substrate or a film to plasma processing to an exhaust means, and at least either an unreacted gas or byproduct exhausted from the processing space are caused to chemically react without allowing plasma in the processing space to reach the chemical-reaction inducing means, thereby improving the processing ability of the chemical-reaction inducing means to process the unreacted gas or byproduct.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.