Thin film transistor substrate and method for forming metal wire thereof
US7211898B2 · kind B2 · utility
6Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2003 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Mar 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/32245
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a thin film transistor substrate and a metal wiring method thereof, more particularly to a thin film transistor substrate comprising self-assembled monolayers between the substrate and the metal wiring, and a metal wiring method thereof. Since a thin film transistor substrate of the present invention comprises three-dimensionally cross-linked self-assembled monolayers between the Si surface and the metal wiring, it has good adhesion ability and anti-diffusion ability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.