High linearity smart HBT power amplifiers for CDMA/WCDMA application
US7212072B1 · kind B1 · utility
2Cited by
14References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2005 |
| Grant date | May 1, 2007 |
| Priority date | — |
| Expiry date | Nov 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/75
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A power amplifier includes larger size transistors to provide higher power gain at lower frequencies. Transistors of transistor unit cells include a horseshoe-shaped emitter and a strip-shaped base to increase gain. Transistors are combined at a first level to form transistor arrays, which are combined with bonding wires at a second level to an output micro strip transmission line. A Vbe referenced bias circuit may include a smart function to lower quiescent current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.