Si-doped GaAs single crystal substrate
US7214269B2 · kind B2 · utility
5Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2004 |
| Grant date | May 8, 2007 |
| Priority date | — |
| Expiry date | May 19, 2025 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B11/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A Si-doped gallium arsenide single crystal substrate has a carrier concentration of 0.1×1018 to 5.0×1018/cm3. The substrate is made by Vertical Bridgeman (VB) method or Vertical Gradient Freeze (VGF) method, and a minimum value and a maximum value of the carrier concentration in substrate plane are within a dispersion of 10% or less of an average carrier concentration in substrate plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.