Photovoltaic element and photovoltaic device
US7214872B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2002 |
| Grant date | May 8, 2007 |
| Priority date | — |
| Expiry date | Dec 3, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/247
Abstract
An ITO film as a transparent conductive film is formed on a semiconductor layer comprising an amorphous semiconductor or a microcrystalline semiconductor, a comb-like collecting electrode is formed on the ITO film, and a cover glass containing alkaline ions is placed on the ITO film and collecting electrode with a resin film made of EVA between them. The (222) plane orientation degree of the ITO film (transparent conductive film) is not less than 1.0, preferably not less than 1.2 and not more than 2.6, and more preferably not less than 1.4 and not more than 2.5. Alternatively, the transparent conductive film has an orientation of (321) planes on the boundary side with respect to the semiconductor layer and mainly an orientation of (222) planes in the remaining portion. When the total thickness of the ITO film is 100 nm, the (321)/(222) diffraction strength ratio in a 10 nm-thick portion on the semiconductor layer side is not less than 0.5 and not more than 2.5.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.