Integrated circuit incorporating higher voltage devices and low voltage devices therein
US7214985B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2004 |
| Grant date | May 8, 2007 |
| Priority date | — |
| Expiry date | Jan 1, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An integrated circuit formed on a semiconductor substrate and configured to accommodate higher voltage devices and low voltage devices therein. In one embodiment, the integrated circuit includes a transistor having a gate located over a channel region recessed into a semiconductor substrate, and a source/drain including a lightly doped region located adjacent the channel region and a heavily doped region located adjacent the lightly doped region. The transistor also includes an oppositely doped well located under and within the channel region. The transistor still further includes a doped region, located between the heavily doped region and the oppositely doped well, having a doping concentration profile less than a doping concentration profile of the heavily doped region. The integrated circuit also includes a driver switch of a driver formed on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.