Bonded thin-film structures for optical modulators and methods of manufacture
US7217584B2 · kind B2 · utility
16Cited by
56References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 10, 2004 |
| Grant date | May 15, 2007 |
| Priority date | — |
| Expiry date | Jul 7, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/2257
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. The silicon layers have high free carrier mobility. In one aspect of the invention a single crystal silicon material is bonded to a thin-film dielectric material to form a silicon-insulator-silicon thin-film structure for an optical modulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.