Semiconductor devices having diffusion barrier regions and halo implant regions and methods of fabricating the same
US7217627B2 · kind B2 · utility
44Cited by
3References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 17, 2004 |
| Grant date | May 15, 2007 |
| Priority date | — |
| Expiry date | Sep 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/307
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides an example of a semiconductor device. In addition, a method for fabricating a semiconductor device is outlined. The semiconductor device may be fabricated by providing a semiconductor substrate, forming a gate over the substrate, forming diffusion barrier ion regions, forming halo regions, forming a source, and forming a drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.