Via hole and trench structures and fabrication methods thereof and dual damascene structures and fabrication methods thereof
US7217663B2 · kind B2 · utility
3Cited by
0References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2005 |
| Grant date | May 15, 2007 |
| Priority date | — |
| Expiry date | Jan 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76862
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Via hole and trench structures and fabrication methods are disclosed. The structure comprises a conductive layer in a dielectric layer, and a via hole in the dielectric layer for exposing a portion of a surface of the conductive layer. A conductive liner covers the exposed surface of the first conductive layer. A trench is formed on the via hole in the dielectric without the conductive liner layer in the trench. Dual damascene structures and fabrications methods are also disclosed. Following the fabrication methods of the via hole and trench structures, a conductive layer is further formed in the via hole and trench structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.