Method for calibrating an optoelectronic device based on APD breakdown voltage
US7217914B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2004 |
| Grant date | May 15, 2007 |
| Priority date | — |
| Expiry date | Oct 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B10/6911
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
Methods and processes are disclosed for calibrating optoelectronic devices, such as optoelectronic transceivers and optoelectronic receivers, based upon an avalanche photodiode breakdown voltage. In general, the method involves adjusting a reverse-bias voltage of the avalanche photodiode until avalanche breakdown of the avalanche photodiode occurs. An optimized APD reverse-bias voltage is then determined by reducing the reverse-bias voltage at which avalanche breakdown occurs by a predetermined offset voltage. This process is performed at a variety of different temperatures. Information concerning each temperature and the corresponding optimized APD reverse-bias voltage is stored in a memory of the optoelectronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.