Semiconductor device
US7217960B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 5, 2006 |
| Grant date | May 15, 2007 |
| Priority date | — |
| Expiry date | Jan 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
It is an object of the present invention to provide a semiconductor device, which can simultaneously achieve a normally-off mode of HFET and an improvement in Imax, and further achieve an improvement in gm and a reduction in gate leakage current. In order to keep a thin barrier layer 13 on an operation layer 12 of a substrate 11 directly under a gate electrode for mostly contributing to achieve the normally-off mode and also implement the high Imax, it is configured in such a way that a thickness of the barrier layer 13 can be increased by the semiconductor layer 17 between gate and source regions and between gate and drain regions. It is therefore possible to achieve the normally-off mode and an improvement in Imax as compared with an FET in which a thickness of the barrier layer is designed so as to be uniform. An insulating film 18 with a dielectric constant higher than that of the barrier layer is further inserted between a gate electrode 16 and the barrier layers 13, so that an improvement in gm and a reduction in gate leakage current can be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.