Patent · US Expired

Low drift planar waveguide grating sensor and method for manufacturing same

US7218802B1 · kind B1 · utility

2Cited by
17References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 30, 2005
Grant dateMay 15, 2007
Priority date—
Expiry dateDec 10, 2025

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB01L2300/0829
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A planar waveguide grating (PWG) sensor is described herein which exhibits a low signal drift and an enhanced sensitivity due to the use of a fully dense silicon-rich nitride surface layer. In the preferred embodiment, the silicon rich silicon nitride surface layer has a composition which includes Si and N, and optionally H, Ge and/or O, where a Si/N atomic ratio is greater than 0.75. In addition, the silicon rich nitride surface layer has a refractive index that is greater than 2.45 and less than 3.2 at a wavelength of operation. A method is also described herein for manufacturing the PWG sensor with acceptable costs and high yields by utilizing well known semiconductor processes and tools.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.