Mask-making member and its production method, mask and its making method, exposure process, and fabrication method of semiconductor device
US7220975B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2002 |
| Grant date | May 22, 2007 |
| Priority date | — |
| Expiry date | Apr 5, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/975
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mask blank has a plurality of pattern formation regions in which mask circuit patterns are to be formed, and a supporting region in which any mask circuit pattern is not to be formed. The supporting region is provided for holding the plurality of pattern formation regions while separating the plurality of pattern formation regions from each other. The supporting region has first and second alignment marks. Exposure of a mask made from the mask blank for forming mask circuit patterns thereon is performed on the basis of the first alignment marks, and exposure of a substrate for forming circuit patterns thereon is performed on the basis of the second alignment marks. With this configuration, a mask used for charged particle beam reduction-and-division transfer exposure can be highly accurately produced at a low cost, and exposure of a substrate can be highly accurately performed by using the mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.