Thin film transistor having a metal induced lateral crystallization region and method for fabricating the same
US7220993B2 · kind B2 · utility
1Cited by
1References
12Claims
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Key dates
| Filing date | Nov 18, 2004 |
| Grant date | May 22, 2007 |
| Priority date | — |
| Expiry date | Nov 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0225
Abstract
A thin film transistor and method for fabricating the same are provided. The thin film transistor comprises a semiconductor layer having a MILC region that has first crystalline grains crystallized by MILC method and second crystalline grains disposed between the first crystalline grains and having different crystalline properties from the first crystalline grains.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.