Bump structure
US7221054B2 · kind B2 · utility
6Cited by
2References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 20, 2005 |
| Grant date | May 22, 2007 |
| Priority date | — |
| Expiry date | Nov 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device, which is capable of suppressing interfacial breakdown between a solder ball and a conductive film, is provided. The semiconductor device of the present invention, when “a” is distance between a terminal part of the solder ball 108 in a face coming into contact with an insulating resin layer 105 and an upper periphery of a via 104, and “b” is distance between a terminal part of the UBM film 107 and the upper periphery of the via 104, the semiconductor device is made to fulfill with 0<a/b≦2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.