Thin film precursor stack for MEMS manufacturing
US7221495B2 · kind B2 · utility
122Cited by
252References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2003 |
| Grant date | May 22, 2007 |
| Priority date | — |
| Expiry date | May 10, 2024 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2201/047
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
This invention provides a precursor film stack for use in the production of MEMS devices. The precursor film stack comprises a carrier substrate, a first layer formed on the carrier substrate, a second layer of an insulator material formed on the first layer, and a third layer of a sacrificial material formed on the second layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.