Versatile method and system for single mode VCSELs
US7221691B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2003 |
| Grant date | May 22, 2007 |
| Priority date | — |
| Expiry date | Jul 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A system and method for providing a single mode VCSEL (vertical cavity surface emitting laser). A lower mirror is formed on a substrate. An active region including one or more quantum wells is formed over the lower mirror. The upper mirror formed over the active region can include multiple layers and may be formed to be have substantially isotropic conductivity. The layers in the upper mirror can include a lightly doped DBR layer, a heavily doped second layer including an isolation region, and a third heavily doped DBR layer. The active region may include conduction layers, which may be periodically doped, to improve conductivity and reduce free carrier absorption.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.