Magnetoresistive device, magnetoresistive head and magnetic recording-reproducing apparatus
US7223485B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2005 |
| Grant date | May 29, 2007 |
| Priority date | — |
| Expiry date | Mar 7, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/32
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, a nonmagnetic intermediate layer formed between the magnetization pinned layer and the magnetization free layer, and electrodes allowing a sense current to flow in a direction substantially perpendicular to the plane of the stack including the magnetization pinned layer, the nonmagnetic intermediate layer and the magnetization free layer. At least one of the magnetization pinned layer and the magnetization free layer is substantially formed of a binary or ternary alloy represented by the formula FeaCobNic (where a+b+c=100 at %, and a≦75 at %, b≦75 at %, and c≦63 at %), or formed of an alloy having a body-centered cubic crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.