Charge-pump with improved biasing of the body regions of the pass-transistors
US7224206B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2005 |
| Grant date | May 29, 2007 |
| Priority date | — |
| Expiry date | Jun 10, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2217/0018
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A charge pump is proposed. The charge pump is integrated in a chip of semiconductor material and includes a plurality of capacitive elements each one connected to a corresponding circuit node of the charge pump, the circuit nodes being arranged in a sequence from an input node to an output node, a plurality of field effect transistors each one for selectively connecting a corresponding first circuit node with a second adjacent circuit node, each transistor being made in a corresponding insulated body region, and for each transistor first biasing means for equalizing the body region with the first circuit node when the transistor is closed, wherein for each transistor the charge pump further includes second biasing means for equalizing the body region with the second circuit node when the transistor is opened.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.