Single crystal silicon producing method, single crystal silicon wafer producing method, seed crystal for producing single crystal silicon, single crystal silicon ingot, and single crystal silicon wafer
US7226506B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 17, 2003 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Nov 27, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/902
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for eliminating slip dislocations in producing single crystal silicon, a seed crystal capable of eliminating the slip dislocations, a single crystal silicon ingot from which the slip dislocations have been eliminated and a single crystal silicon wafer, are disclosed. Single crystal silicon is produced by dipping a seed crystal in a melt and pulling the seed crystal up along the axis of the seed crystal, using a single crystal (1) in which the <110> crystal orientation (10) is inclined at a predetermined angle θ with respect to the axial direction (9) so that the edge direction (8) of the {111} crystal plane is inclined with respect to the axial direction (9). When single crystal silicon is grown while pulling up a seed crystal by the CZ method, a single crystal silicon ingot of a large diameter and a heavy weight can be pulled up by eliminating slip dislocations from the thick crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.