Group II-VI semiconductor devices
US7227196B2 · kind B2 · utility
Inventors
Key dates
| Filing date | May 19, 2004 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | May 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3059
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices containing group II-VI semiconductor materials are disclosed. The devices may include a p-n junction containing a p-type group II-VI semiconductor material and an n-type semiconductor material. The p-type group II-VI semiconductor includes a single crystal group II-VI semiconductor containing atoms of group II elements, atoms of group VI elements, and one or more p-type dopants. The p-type dopant concentration is greater than about 1016 atoms·cm−3, the semiconductor resistivity is less than about 0.5 ohm·cm, and the carrier mobility is greater than about 0.1 cm2/V·s. The semiconductor devices may include light emitting diodes, laser diodes, field effect transistors, and photodetectors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.