Solid-state image pickup apparatus
US7227208B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2005 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Jul 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/146
Abstract
The invention is to suppress a leak current in a photodiode and an unevenness in the leak currents. In a photoelectric converting device including a channel stop area of a higher concentration than in an element isolating insulation film formed between a photodiode, having an n-type semiconductor area formed in a p-type semiconductor, and an adjacent element, and in a p-type semiconductor layer formed under the element isolating insulation film, and a wiring layer formed in a part on the element isolating insulation film, the wiring layers on the element isolating insulation film adjacent to the photodiodes are unified in an effective area and a potential, and a p-type dark current reducing area of a higher concentration than in the channel stop area is provided in at least a part of an area opposed to the wiring layer across the element isolating insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.