Decoupling capacitors and semiconductor integrated circuit
US7227211B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2004 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Dec 6, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/811
Abstract
VSS 302 is provided to a gate portion 304 and VDD 301 is provided to a source portion 305 and a drain portion 306 of a MOS transistor which constitutes a decoupling capacitor, and a potential NWVDD 303 different from that provided to the source portion 305 and the drain portion 306 is provided to a substrate portion 307. If NWVDD 303 is set higher than VDD 301, a depletion layer 309 is spread, so that a leakage current can be reduced instead of reducing a capacitance of the decoupling capacitor. In addition, if NWVDD 303 is set lower than VDD 301 so as not to cause latchup, the depletion layer 309 is reduced, so that the capacitance of the decoupling capacitor can be increased. By changing the potential NWVDD 303 provided to the substrate portion 307, a capacitance value and a leakage current value of the decoupling capacitor can be controlled. Thereby making it possible to achieve a decoupling capacitor capable of controlling the capacitance value and the leakage current value and also having excellent response characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.