Semiconductor device having a capacitor with a stepped cylindrical structure and method of manufacturing same
US7227215B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2004 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | May 17, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/318
Abstract
According to some embodiments, a capacitor includes a storage conductive pattern, a storage electrode having a complementary member enclosing a storage conductive pattern so as to complement an etch loss of the storage electrode, a dielectric layer disposed on the storage electrode, and a plate electrode disposed on the dielectric layer. Because the complementary member compensates for the etch loss of the storage electrode during several etching processes, the deterioration of the structural stability of the storage electrode may be prevented. Additionally, because the complementary member is formed on an upper portion of the storage electrode, the storage electrode may have a sufficient thickness to enhance the electrical characteristics of the capacitor that includes the storage electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.