Synchronous first-in/first-out block memory for a field programmable gate array
US7227380B2 · kind B2 · utility
5Cited by
132References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2005 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Dec 7, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/1778
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present invention comprises a field programmable gate array that has a plurality of dedicated first-in/first-out memory logic components. The field programmable gate array includes a plurality of synchronous random access memory blocks that are coupled to a plurality of dedicated first-in/first-out memory logic components and a plurality of random access memory clusters that are programmably coupled to the plurality of dedicated first-in/first-out memory logic components and to the plurality of synchronous random access memory blocks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.