High speed MOSFET output driver
US7227400B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2005 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Jul 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K3/356104
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high speed MOSFET output driver is disclosed that includes a voltage level shifter stage operable to transition an input signal at a first voltage level to an output signal at a second voltage level, an output stage operable to drive high voltage output load, and a hot inverter, biased between the second voltage level and the bias voltage such that the voltage gain of the output signal is increased and at the same time the minimum voltage level of the output signal introduced to the output stage is decreased, improving the control and the transition time of the output signal and allowing all components of the high speed MOSFET output driver of the present invention to be fabricated using a single thin gate oxide process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.