Magnetoresistive effect element and magnetic memory device
US7227771B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2004 |
| Grant date | Jun 5, 2007 |
| Priority date | — |
| Expiry date | Mar 12, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive effect element includes a TMR element disposed at an intersection where a bit line and a write word line intersect, in a manner sandwiched between the bit line and the write word line, and is configured such that it includes a sensitive magnetic layer whose magnetization direction is changed by a synthetic magnetic field of magnetic fields generated around the bit line and the write word line, and at the same time such that electric current flows in a direction perpendicular to the laminating surfaces thereof, and a magnetic material individually covering the bit line and the write word line at the intersection, thereby forming an annular magnetic layer associated with the bit line and an annular magnetic layer associated with the write word line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.