Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys
US7229498B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 2002 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Aug 31, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructure (18) product for various applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.