Phosphorous doping methods of manufacturing field effect transistors having multiple stacked channels
US7229884B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 29, 2004 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Sep 24, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
Abstract
Integrated circuit field effect transistors are manufactured by forming a pre-active pattern on a surface of a substrate, while refraining from doping the pre-active pattern with phosphorus. The pre-active pattern includes a series of interchannel layers and channel layers stacked alternately upon each other. Source/drain regions are formed on the substrate, at opposite ends of the pre-active pattern. The interchannel layers are then selectively removed, to form tunnels passing through the pre-active pattern, thereby defining an active channel pattern including the tunnels and channels including the channel layers. The channels are doped with phosphorus after selectively removing the interchannel layers. A gate electrode is then formed in the tunnels and surrounding the channels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.