Semiconductor processing silica soot abrasive slurry method for integrated circuit microelectronics
US7229927B1 · kind B1 · utility
1Cited by
7References
116Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 22, 2000 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | May 15, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The invention utilizes colloidal silica soot (62) in a semiconductor process for chemical-mechanical planarizing a semiconductor integrated circuit workpiece (24) with a slurry (60). The particulate abrasive agent colloidal solid sphere fused silica soot (62) provides a beneficial CMP slurry/process for semiconductor device manufacturing compared to standard semiconductor CMP slurries with conventional colloidal sol-gel or fumed silica.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.