Active matrix substrate and display device
US7230272B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2005 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Aug 25, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
An active matrix substrate of the present invention includes a TFT and a substrate. The TFT formed on a substrate includes, when viewed in a normal direction of the substrate: a first region in which a gate electrode overlaps a source electrode via a semiconductor layer; a second region in which the gate electrode overlaps a drain electrode via the semiconductor layer; and a third region in which the semiconductor layer overlaps neither the gate electrode, source electrode, nor the drain electrode. The third region includes a portion adjoining the source electrode lying outside the first region and/or a portion adjoining the drain electrode lying outside the second region. The gate electrode includes: a main body, which includes a portion constituting the first region and the second region; and a protrusion from the main body. At least a part of the protrusion of the gate electrode is in between the drain electrode and the portion of the third region adjoining the source electrode, or between the source electrode and the portion of the third region adjoining the drain electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.