Laterally diffused metal oxide semiconductor device and method of forming the same
US7230302B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 29, 2004 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Mar 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the laterally diffused metal oxide semiconductor device includes a source/drain having a lightly doped region located adjacent the channel region and a heavily doped region located adjacent the lightly doped region. The laterally diffused metal oxide semiconductor device further includes an oppositely doped well located under and within the channel region, and a doped region, located between the heavily doped region and the oppositely doped well, having a doping concentration profile less than a doping concentration profile of the heavily doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.