Register read for volatile memory
US7230876B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 13, 2005 |
| Grant date | Jun 12, 2007 |
| Priority date | — |
| Expiry date | Oct 17, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/4061
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Data not stored in the DRAM array of a SDRAM module is read from the SDRAM module in a synchronous data transfer. The data transfer, referred to as register read command/operation, resembles a read command/operation directed to data stored in the DRAM array in timing and operation. The register read command is distinguished by a unique encoding of the SDRAM control signals and bank address bits. In one embodiment, the register read command comprises the same control signal states as a MSR or EMSR command, with the bank address set to a unique value, such as 2'b10. The register read command may read only a single datum, or may utilize the address bus to address a plurality of data not stored in the DRAM array. The register read operation may be a burst read, and the burst length may be defined in a variety of ways.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.