Method of forming an integrated circuit incorporating higher voltage devices and low voltage devices therein

US7232733B2 · kind B2 · utility

Assignee

• Enpirion, Inc. · US

Inventors

• Ashraf W. Lotfi · Rowlett, US
• Jian Tan · Beijing, CN

Key dates

• Filing date: Aug 23, 2004
• Grant date: Jun 19, 2007
• Expiry date: Dec 19, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A method of forming an integrated circuit configured to accommodate higher voltage and low voltage devices. In one embodiment, the method of forming the integrated circuit includes forming a transistor by forming a gate over a semiconductor substrate. The method of forming the transistor also includes forming a source/drain by forming a lightly doped region adjacent a channel region recessed into the semiconductor substrate and forming a heavily doped region adjacent the lightly doped region. The method of forming the transistor further includes forming an oppositely doped well under and within the channel region, and forming a doped region between the heavily doped region and the oppositely doped well. The doped region has a doping concentration profile less than a doping concentration profile of the heavily doped region. The method of forming the integrated circuit also includes forming a driver switch of a driver on the semiconductor substrate.