Radiation detector
US7233003B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 17, 2004 |
| Grant date | Jun 19, 2007 |
| Priority date | — |
| Expiry date | Jun 18, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/195
Abstract
The radiation detector according to this invention has a common electrode for bias voltage application formed on a surface of an amorphous selenium semiconductor film (a-Se semiconductor film) sensitive to radiation. The common electrode is a gold thin film having a thickness in a range of 100 to 1,000 Å. The gold thin film acting as the common electrode may be formed on the surface of the a-Se semiconductor film at a relatively low vapor deposition temperature and in a reduced vapor deposition time. This feature suppresses a generation of defects in the a-Se semiconductor film due to formation of the common electrode. The gold thin film for the common electrode is not so thick as in the prior art, but is 1,000 Å or less. With the reduced thickness, the common electrode has improved boding property with respect to the a-Se semiconductor film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.