Semiconductor device and method for fabricating the same
US7233073B2 · kind B2 · utility
1Cited by
1References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2004 |
| Grant date | Jun 19, 2007 |
| Priority date | — |
| Expiry date | Jan 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After forming a hole in an insulating film, a first tungsten film is formed over the wall and bottom surfaces of the hole. Then, a second tungsten film is formed by using the first tungsten film as a seed layer to fill up the hole. When the first tungsten film is formed, the average value of the diameters of crystal grains of the portion of the first tungsten film which is formed on the bottom surface of the hole is suppressed to 30 nm or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.